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| Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT 6520 HIGH-VOLTAGE TRANSISTOR P-N-P transistor Marking CMBT6520 = 2Z PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25C D.C. current gain -IC = 10 mA; -VCE = 10 V -VCBO -VCEO -VEBO -IC P tot hFE max. max. max. max. max min. 350 350 5 500 225 30 V V V mA mW RATINGS (at TA = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) -VCBO Collector-emitter voltage (open base) -VCEO Emitter-base voltage (open collector) -VEBO Collector current (d.c.) -IC P tot Total power dissipation at Tamb = 25C Storage temperature Tstg Junction temperature Tj max. 350 max. 350 max. 5 max. 500 max 225 -55 to +150 max. 150 V V V mA mW C C Continental Device India Limited Data Sheet Page 1 of 3 CMBT 6520 THERMAL CHARACTERISTICS Tj = P (Rth j-t + Rth s-a) + Tamb Thermal resistance from junction to ambient Rth j-a 556 C/mW CHARACTERISTICS (at TA = 25C unless otherwise specified) Collector-emitter breakdown voltage -V(BR)CEO -IC = 1 mA Collector-base breakdown voltage -IC = 100 A -V(BR)CBO Emitter-base breakdown voltage -IE = 10 A -V(BR)EBO Collector cut-off current -VCB = 250 V -ICBO Emitter cut-off current -VEB = 4 V -IEBO Output capacitance at f = 1 MHz -VCB = 20 V Cc Input capacitance at f = 1 MHz -VEB = 0.5 V Ce Saturation voltages -IC = 10 mA; -IB = 1 mA -IC = 20 mA; -IB = 2 mA -IC = 30 mA; -IB = 3 mA -IC = 50 mA; -IB = 5 mA D.C. current gain -IC = 1 mA; -VCE = 10 V -IC = 10 mA; -VCE = 10 V -IC = 30 mA; -VCE = 10 V -IC = 50 mA; -VCE = 10 V -IC = 100 mA; -VCE = 10 V Base emitter voltage IC = 100 mA; VCE = 10 V Transition frequency -VCE = 20 V; -IC = 10 mA; f = 20 MHz min. min. min. max. max. max. max. 350 350 5 50 50 6 100 V V V nA nA pF pF -VCEsat -VBEsat -VCEsat -VBEsat -VCEsat -VBEsat -VCEsat max. max. max. max. max. max. max. 0.3 0.75 0.35 0.85 0.5 0.9 1.0 V V V V V V V hFE hFE hFE hFE hFE VBE(on) fT min. min. min. max. min. max. min. max. min. max. 20 30 30 200 20 200 15 2 20 200 V MHz MHz Continental Device India Limited Data Sheet Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3 CDIL is a registered Trademark of |
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